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Conferences

Modeling the distributed physical effects in the intrinsic base of SiGe HBTs using transmission line concepts


Conference

   International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Pages

   320 to 323

Year

   2012

Place

   840 (Estados Unidos de América)

Publishing house

   SISPAD

Publisher

   

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Prof. Dr. Manuel López-Amo
Dpto de Ingeniería Eléctrica y Electrónica
Campus Arrosadia
Pamplona
Tel. +34 948 169055
Fax. + 34 948 169720
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