International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Chapter title

   Modeling the distributed physical effects in the intrinsic base of SiGe HBTs using transmission line concepts

Pages

   320 to 323

Authors

   Alvarez Botero, Germán Andrés

Publishing house

   SISPAD

Publisher

   

Place

   Desconocido (Estados Unidos de América)

Year

   2012

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