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Silicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic films

Authors

Pérez-Escudero, J.M.; Buldain, I.; Beruete, M.; Goicoechea, J.; Liberal, I.

Journal

   Optics Express
   Volume 28
   Issue 21
   Pages 31624 to 31636
   Year 2020

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BIbTex format
@article{
title={Silicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic films},
author={Pérez-Escudero, J.M. and Buldain, I. and Beruete, M. and Goicoechea, J. and Liberal, I.},
journal={Optics Express},
year={2020},
volume={28},
number={21},
pages={31624-31636},
doi={},
}
RIS format (for Reference Manager, ProCite, EndNote)
TY - JOUR
T1 - Silicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic films
AU - Pérez-Escudero, J.M.
AU - Buldain, I.
AU - Beruete, M.
AU - Goicoechea, J.
AU - Liberal, I.
TI - Optics Express
PY - 2020
VL - 28
M1 - 21
SP - 31624-31636
DO -
ER -
RefWorks format
RT Journal Article
T1 Silicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic films
A1 Pérez-Escudero, J.M.
A1 Buldain, I.
A1 Beruete, M.
A1 Goicoechea, J.
A1 Liberal, I.
JF Optics Express
YR 2020
VO 28
IS 21
SP 31624-31636
DO

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Prof. Dr. Iñigo Ederra Urzainqui
Dpto de Ingeniería Eléctrica y Electrónica
Campus Arrosadia
Pamplona
Tel. +34 948 166039
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